ΤΡΑΝΖΙΣΤΟΡ BF506

Material of transistor: Si Polarity: PNP Maximum collector power dissipation (Pc), W: 0.25 Maximum collector-base voltage |Ucb|, V: 40 Maximum collector-emitter voltage |Uce|, V: 35 Maximum emitter-base voltage |Ueb|, V: 4 Maximum collector current |Ic max|, A: 0.03 Maximum temperature (Tj), °C: 150 Transition frequency (ft), MHz: 250 Collector capacitance (Cc), pF: 1.2 Forward current transfer ratio (hFE), min: 20 Package of BF506 transistor: TO92